PART |
Description |
Maker |
FDD26AN06A0 |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
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FAIRCHILD[Fairchild Semiconductor]
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FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
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FAIRCHILD[Fairchild Semiconductor]
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FDI025N06 |
60V N-Channel PowerTrenchMOSFET N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.5mヘ N-Channel PowerTrench? MOSFET 60V, 265A, 2.5mΩ
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Fairchild Semiconductor
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RK3055 RK3055E A5800305 |
Transistors > MOS FET > Power MOS FET From old datasheet system Small switching (60V 8A) Small switching (60V/ 8A) Small switching (60V, 8A) 小开关(60V的,8A条)
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ROHM[Rohm] Rohm Co., Ltd.
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IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
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IRFP064V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?
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Power MOSFET International Rectifier
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FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No ; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6) FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 积极的固定电压稳压器 FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45) FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
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IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 84A条? Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
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International Rectifier, Corp.
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NDT2955 NDT2955J23Z |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 2.5AI(四)|的SOT - 223 P-Channel Enhancement Mode Field Effect Transistor2.5A60V.3ΩP沟道增强型场效应管(漏电2.5A, 漏源电压-60V,导通电.3Ω
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
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IRF[International Rectifier]
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2SD2027S 2SB507C 2SB1346S 2SD2027R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
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Rohm Co., Ltd.
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